Correlation of defect profiles with carrier profiles of InAs epilayers on GaP
Identifieur interne : 010480 ( Main/Repository ); précédent : 010479; suivant : 010481Correlation of defect profiles with carrier profiles of InAs epilayers on GaP
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Abstract
The carrier profile for InAs films grown on GaP is modeled as a first-order approximation which assumes that 90° edge dislocation intersections and the threading dislocation intersections act as shallow donors. Due to dislocation annihilation during growth, the threading dislocation intersection density decreases as the inverse of the distance x from the InAs/GaP interface, D(x)=D0x0/(x0+x), where D0 and x0 are dislocation density at the InAs/GaP interface and the first annihilation position from the interface, respectively. The carrier profile in InAs films can be described by a similar equation that is deduced from the threading dislocation intersection profile. The calculated carrier profiles agree well with measured carrier profiles. This correlation supports our hypothesis that both the edge dislocation intersections and the threading dislocation intersections act as shallow donor sources. © 2001 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Correlation of defect profiles with carrier profiles of InAs epilayers on GaP</title><author><name sortKey="Tsukamoto, H" uniqKey="Tsukamoto H">H. Tsukamoto</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520-8284</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Department of Electrical Engineering, Yale University, New Haven</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>School of Materials Science and Engineering, Purdue University, W. Lafayette, Indiana 47907</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Indiana</region></placeName><wicri:cityArea>School of Materials Science and Engineering, Purdue University, W. Lafayette</wicri:cityArea></affiliation></author><author><name sortKey="Chen, E H" uniqKey="Chen E">E.-H. Chen</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520-8284</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Department of Electrical Engineering, Yale University, New Haven</wicri:cityArea></affiliation></author><author><name sortKey="Woodall, J M" uniqKey="Woodall J">J. M. Woodall</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520-8284</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Department of Electrical Engineering, Yale University, New Haven</wicri:cityArea></affiliation></author><author><name sortKey="Gopal, V" uniqKey="Gopal V">V. Gopal</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520-8284</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Department of Electrical Engineering, Yale University, New Haven</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0073906</idno><date when="2001-02-12">2001-02-12</date><idno type="stanalyst">PASCAL 01-0073906 AIP</idno><idno type="RBID">Pascal:01-0073906</idno><idno type="wicri:Area/Main/Corpus">011C55</idno><idno type="wicri:Area/Main/Repository">010480</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier density</term><term>Defect states</term><term>Dislocation density</term><term>Edge dislocations</term><term>Experimental study</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface states</term><term>Interface structure</term><term>Semiconductor epitaxial layers</term><term>TEM</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6855L</term><term>7361E</term><term>7155E</term><term>6835D</term><term>7320H</term><term>6172F</term><term>Etude expérimentale</term><term>Indium composé</term><term>Couche épitaxique semiconductrice</term><term>Semiconducteur III-V</term><term>Densité dislocation</term><term>Densité porteur charge</term><term>Etat défaut</term><term>TEM</term><term>Dislocation coin</term><term>Structure interface</term><term>Etat interface</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The carrier profile for InAs films grown on GaP is modeled as a first-order approximation which assumes that 90° edge dislocation intersections and the threading dislocation intersections act as shallow donors. Due to dislocation annihilation during growth, the threading dislocation intersection density decreases as the inverse of the distance x from the InAs/GaP interface, D(x)=D<sub>0</sub>x<sub>0</sub>/(x<sub>0</sub>+x), where D<sub>0</sub> and x<sub>0</sub> are dislocation density at the InAs/GaP interface and the first annihilation position from the interface, respectively. The carrier profile in InAs films can be described by a similar equation that is deduced from the threading dislocation intersection profile. The calculated carrier profiles agree well with measured carrier profiles. This correlation supports our hypothesis that both the edge dislocation intersections and the threading dislocation intersections act as shallow donor sources. © 2001 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>78</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Correlation of defect profiles with carrier profiles of InAs epilayers on GaP</s1></fA08><fA11 i1="01" i2="1"><s1>TSUKAMOTO (H.)</s1></fA11><fA11 i1="02" i2="1"><s1>CHEN (E.-H.)</s1></fA11><fA11 i1="03" i2="1"><s1>WOODALL (J. M.)</s1></fA11><fA11 i1="04" i2="1"><s1>GOPAL (V.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520-8284</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>School of Materials Science and Engineering, Purdue University, W. Lafayette, Indiana 47907</s1></fA14><fA20><s1>952-954</s1></fA20><fA21><s1>2001-02-12</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0073906</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The carrier profile for InAs films grown on GaP is modeled as a first-order approximation which assumes that 90° edge dislocation intersections and the threading dislocation intersections act as shallow donors. Due to dislocation annihilation during growth, the threading dislocation intersection density decreases as the inverse of the distance x from the InAs/GaP interface, D(x)=D<sub>0</sub>x<sub>0</sub>/(x<sub>0</sub>+x), where D<sub>0</sub> and x<sub>0</sub> are dislocation density at the InAs/GaP interface and the first annihilation position from the interface, respectively. The carrier profile in InAs films can be described by a similar equation that is deduced from the threading dislocation intersection profile. The calculated carrier profiles agree well with measured carrier profiles. This correlation supports our hypothesis that both the edge dislocation intersections and the threading dislocation intersections act as shallow donor sources. © 2001 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H55L</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C61E</s0></fC02><fC02 i1="03" i2="3"><s0>001B70A55E</s0></fC02><fC02 i1="04" i2="3"><s0>001B60H35D</s0></fC02><fC02 i1="05" i2="3"><s0>001B70C20H</s0></fC02><fC02 i1="06" i2="3"><s0>001B60A72F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>6855L</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7361E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7155E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>6835D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>7320H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>6172F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Couche épitaxique semiconductrice</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Semiconductor epitaxial layers</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Densité dislocation</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Dislocation density</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Densité porteur charge</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Carrier density</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Etat défaut</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Defect states</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>TEM</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>TEM</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Dislocation coin</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Edge dislocations</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Structure interface</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Interface structure</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Etat interface</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Interface states</s0></fC03><fN21><s1>043</s1></fN21><fN47 i1="01" i2="1"><s0>0106M000088</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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